表紙画像

Device performance of silicene nanoribbon field-effect transistor under ballistic transport

Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is emplo...

保存先:

書誌詳細
主要な著者:	Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
フォーマット:	Conference or Workshop Item
言語:	English
出版事項:	2020
主題:	TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://eprints.utm.my/id/eprint/94020/1/ChuanMuWen2020_DevicePerformanceofSiliceneNanoribbon.pdf http://eprints.utm.my/id/eprint/94020/ http://www.dx.doi.org/10.1109/ICSE49846.2020.9166895
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

類似資料

Device performance of silicene nanoribbon field-effect transistor under ballistic transport
著者:: Chuan, Mu Wen, 等
出版事項: (2020)

Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors
著者:: Chuan, M. W., 等
出版事項: (2021)

Electronic properties of zigzag silicene nanoribbons with single vacancy defect
著者:: Chuan, M. W., 等
出版事項: (2020)

Electronic properties of silicene nanoribbons using tight-binding approach
著者:: Chuan, M. W., 等
出版事項: (2019)

Modelling and simulation of 2d aluminium-doped silicene transport properties in field-effect transistors
著者:: Chuan, Mu Wen
出版事項: (2021)

2D honeycomb silicon: A review on theoretical advances for silicene field-effect transistors
著者:: Chuan, Mu Wen, 等
出版事項: (2020)

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model
著者:: Chuan, Mu Wen, 等
出版事項: (2022)

Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
著者:: Chuan, M. W., 等
出版事項: (2020)

Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
著者:: Heng, Chin Chuan
出版事項: (2007)

Bilayer graphene nanoribbon mobility model in ballistic transport limit
著者:: Mousavi, S. Mahdi, 等
出版事項: (2013)

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
著者:: Arora, Vijay K., 等
出版事項: (2007)

Carrier velocity in high-field transport of trilayer graphene nanoribbon field effect transistor
著者:: Rahmani, Meisam, 等
出版事項: (2014)

Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors
著者:: Chin, H. C., 等
出版事項: (2016)

Physics-based modelling of ballistic transport in nanoscale transistor
著者:: Saad, Ismail, 等
出版事項: (2009)

Device performance of double-gate schottky-barrier graphene nanoribbon field-effect transistors with physical scaling.
著者:: Chuan, Mu Wen, 等
出版事項: (2023)

Modeling of graphene nanoribbon field effect transistor
著者:: Rahmani, Meisam
出版事項: (2013)

Stability improvement of an efficient graphene nanoribbon field-effect transistor-based sram design
著者:: Mathan, N., 等
出版事項: (2020)

Ballistic transport in nanoscale devices
著者:: Arora, Vijay Kumar
出版事項: (2012)

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach
著者:: Wong, Kien Liong, 等
出版事項: (2020)

Performance metrics of pristine graphene nanoribbons field-effect transistor with different types of contacts
著者:: Wong, Kien Liong, 等
出版事項: (2020)

Characterisation of ballistic carbon nanotube field-effect transistor
著者:: Sanudin, Rahmat
出版事項: (2005)

Graphene nanoribbon field-effect transistor at high bias
著者:: Ghadiry, Mahdiar Hossein, 等
出版事項: (2014)

Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications
著者:: Chuan, M. W., 等
出版事項: (2021)

Characterisation of ballistic carbon nanotube field-effect transistor
著者:: Sanudin, Rahmat
出版事項: (2005)

Characterisation of ballistic carbon nanotube field-effect transistor
著者:: Sanudin, Rahmat
出版事項: (2005)

Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties
著者:: Chuan, M. W., 等
出版事項: (2020)

The sub-band effect on the graphene nanoribbon based field-effect transistor
著者:: Kiat, Wong King, 等
出版事項: (2012)

Modeling and simulation of bilayer graphene nanoribbon field effect transistor
著者:: Mousavi, Seyed Mahdi
出版事項: (2012)

Modeling and simulation of strained graprene nanoribbon field effect transistor
著者:: Cre Rosid, Nurul Aida Izuani
出版事項: (2016)

Vertical channel structure and ballistic carrier transport of nanoscale metal oxide semiconductor field effect transistor
著者:: Saad, Ismail
出版事項: (2009)

Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor
著者:: Chuan, M. W., 等
出版事項: (2021)

High-field initiated ballistic transport in carbon nanotubes
著者:: Tan, Michael L. P., 等
出版事項: (2009)

Ballistic quantum transport in nano devices and circuits
著者:: Arora, Vijay Kumar
出版事項: (2008)

Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
著者:: Mahdiar, Hosseinghadiry
出版事項: (2014)

Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects
著者:: Chin, Huei Chaeng, 等
出版事項: (2014)

Current conduction in dual channel black phosphorene nanoribbon transistor
著者:: Auzar, Zuriana, 等
出版事項: (2018)

Analytical band Monte Carlo analysis of electron transport in silicene
著者:: Yeoh, K.H., 等
出版事項: (2016)

Carrier statistics of highly doped armchair graphene nanoribbons with edge disorder
著者:: Wong, K. L., 等
出版事項: (2020)

Edge perturbation on electronic properties of boron nitride nanoribbons
著者:: Wong, K. L., 等
出版事項: (2023)

Electronic Properties of Graphene Nanoribbons With Line-Edge Roughness Doped with Nitrogen and Boron
著者:: Wong, K. L., 等
出版事項: (2020)