Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure

• Main Authors: Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
• Format: Article
• Published: Elsevier B. V. 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/86310/; https://dx.doi.org/10.1016/j.physe.2019.113731

Unlike graphene which requires redesigned fabrication technique, silicene is predicted to be compatible with the silicon wafer technology. However, similar to graphene, the gapless properties of silicene hinder its application as field-effect transistors (FETs). By employing nearest neighbour tight-...