Device performance of silicene nanoribbon field-effect transistor under ballistic transport

• Main Authors: Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/94020/1/ChuanMuWen2020_DevicePerformanceofSiliceneNanoribbon.pdf; http://eprints.utm.my/id/eprint/94020/; http://www.dx.doi.org/10.1109/ICSE49846.2020.9166895

Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is employed to compute the current-voltage characteristics of SiNR FETs. This theoretical model shows that the SiNR FET can achieve on-to-off current ratio up to 105, subthreshold swing of 65.12 mV/dec, and drain-induced barrier lowering of 44.44mV/V. The relationship between the drain current and the oxide thickness is also discussed. The findings show that silicene is suitable for future nanoelectronic applications.