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Device performance of silicene nanoribbon field-effect transistor under ballistic transport

Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is emplo...

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書目詳細資料
Main Authors:	Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
格式:	Conference or Workshop Item
語言:	English
出版:	2020
主題:	TK Electrical engineering. Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/94020/1/ChuanMuWen2020_DevicePerformanceofSiliceneNanoribbon.pdf http://eprints.utm.my/id/eprint/94020/ http://www.dx.doi.org/10.1109/ICSE49846.2020.9166895
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