Device performance of silicene nanoribbon field-effect transistor under ballistic transport

• المؤلفون الرئيسيون: Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: TK Electrical engineering. Electronics Nuclear engineering
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/94020/1/ChuanMuWen2020_DevicePerformanceofSiliceneNanoribbon.pdf; http://eprints.utm.my/id/eprint/94020/; http://www.dx.doi.org/10.1109/ICSE49846.2020.9166895

Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is emplo...