3D simulation investigating ZnO NWFET characteristics

• 主要な著者: Ditshego, Nonofo M. J., Mohamed Sultan, Suhana
• フォーマット: 論文
• 言語: English
• 出版事項: Trans Tech Publications Ltd 2019
• 主題: TK Electrical engineering. Electronics Nuclear engineering
• オンライン･アクセス: http://eprints.utm.my/id/eprint/87985/1/SuhanaMohamedSultan2019_3DSimulationInvestigatingZnoNweetCharacteristics.pdf; http://eprints.utm.my/id/eprint/87985/; http://dx.doi.org/10.4028/www.scientific.net/JNanoR.58.40

3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2 /Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the d...