Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition

In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF powe...

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Bibliographic Details
Main Authors: Mustapha, N., Omar, M. F., Ismail, A. K., Zainal, J., Raja Ibrahim, R. K.
Format: Article
Published: 2015
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Online Access:http://eprints.utm.my/id/eprint/59286/
http://dx.doi.org/10.1063/1.4915240
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