Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique

• Main Authors: Chong, S.K., Goh, B.T., Aspanut, Z., Muhamad, M.R., Dee, C.F., Rahman, S.A.
• Format: Article
• Published: 2011
• Subjects: QC Physics
• Online Access: http://eprints.um.edu.my/7338/

Silicon nanowires (SiNWs) were synthesized by simultaneous evaporation of Au and Si deposition using H(2) diluted SiH(4). The deposition techniques combined hot-wire (HW) and plasma enhanced chemical vapor deposition (PECVD). Au wires were placed on the filament and heated simultaneously with the ac...