Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes
In this work, indium gallium nitride (InGaN) based near ultraviolet light emitting diode (NUV-LED) has been grown on a 2-inch c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition (MOCVD). The attention was paid to the effects of the V/III ratio o...
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| Main Authors: | , , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48948/1/MNRG_ZH01.pdf http://eprints.usm.my/48948/ |
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