Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes

• Main Authors: Nazmi, Ahmad Nadzimuddin, Ahmad Noorden, Ahmad Fakhrurrazi, Isa, Hafizah Noor, Bahadoran, Mahdi
• Format: Article
• Language: English; English
• Published: Springer 2024
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/114029/1/114029_Configuration%20analysis%20of%20the%20quantum%20well%20epi-layer.pdf; http://irep.iium.edu.my/114029/7/114029_Configuration%20analysis%20of%20the%20quantum%20well%20epi-layer_Scopus.pdf; http://irep.iium.edu.my/114029/; https://link.springer.com/article/10.1140/epjp/s13360-024-04948-z

An Indium Gallium Arsenide (InGaAs)-based-infrared light emitting diodes (lR-LEDs) chip was numerically analyzed based on different quantum wells (QWs) configurations in heterojunction epi-layers for optimal electro-optics performance. The performance analysis is executed based on carrier concentrat...