Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator
In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ) ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology of the SeN...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48767/1/Section%20C%20161-2.pdf%20cut.pdf http://eprints.usm.my/48767/ |
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