Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy

• Main Authors: Bablu Kumar Ghosh, Akihiro Hashimoto, Akio Yamamoto
• Format: Article
• Language: English
• Published: John Wiley & Sons Ltd 2003
• Subjects: QC Physics
• Online Access: https://eprints.ums.edu.my/id/eprint/20647/1/Improvement%20of%20the%20optical%20properties%20of%20GaN%20epilayers%20on%20Si.pdf; https://eprints.ums.edu.my/id/eprint/20647/; https://doi.org/10.1002/pssc.200303541

This paper reports the effect of the GaN coating layer on the optical properties of GaN epilayers grown on GaAs/Si(111). Almost crack free GaN epilayers are found to be grown when a thin (∼25 nm) GaN coating layer is inserted on 0.5 and 2 μm GaAs layers at 550 °C. Then nitridation of the GaAs layer...