Development Of N-Type Spin-On Dopant For Silicon Devices
In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...
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| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Online Access: | http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf http://eprints.usm.my/29136/ |
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