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Development Of N-Type Spin-On Dopant For Silicon Devices

In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...

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Bibliographic Details
Main Author: Ahmad Kamil, Suraya
Format: Thesis
Language:English
Published: 2009
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf
http://eprints.usm.my/29136/
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spelling my.usm.eprints.29136 http://eprints.usm.my/29136/ Development Of N-Type Spin-On Dopant For Silicon Devices Ahmad Kamil, Suraya QC1-999 Physics In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3. 2009 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf Ahmad Kamil, Suraya (2009) Development Of N-Type Spin-On Dopant For Silicon Devices. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Ahmad Kamil, Suraya
Development Of N-Type Spin-On Dopant For Silicon Devices
description In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3.
format Thesis
author Ahmad Kamil, Suraya
author_facet Ahmad Kamil, Suraya
author_sort Ahmad Kamil, Suraya
title Development Of N-Type Spin-On Dopant For Silicon Devices
title_short Development Of N-Type Spin-On Dopant For Silicon Devices
title_full Development Of N-Type Spin-On Dopant For Silicon Devices
title_fullStr Development Of N-Type Spin-On Dopant For Silicon Devices
title_full_unstemmed Development Of N-Type Spin-On Dopant For Silicon Devices
title_sort development of n-type spin-on dopant for silicon devices
publishDate 2009
url http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf
http://eprints.usm.my/29136/
_version_ 1643706830026702848
score 13.160551

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