Development Of N-Type Spin-On Dopant For Silicon Devices
In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...
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2009
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my.usm.eprints.29136 http://eprints.usm.my/29136/ Development Of N-Type Spin-On Dopant For Silicon Devices Ahmad Kamil, Suraya QC1-999 Physics In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3. 2009 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf Ahmad Kamil, Suraya (2009) Development Of N-Type Spin-On Dopant For Silicon Devices. Masters thesis, Universiti Sains Malaysia. |
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QC1-999 Physics Ahmad Kamil, Suraya Development Of N-Type Spin-On Dopant For Silicon Devices |
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In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3. |
format |
Thesis |
author |
Ahmad Kamil, Suraya |
author_facet |
Ahmad Kamil, Suraya |
author_sort |
Ahmad Kamil, Suraya |
title |
Development Of N-Type Spin-On Dopant For Silicon Devices |
title_short |
Development Of N-Type Spin-On Dopant For Silicon Devices |
title_full |
Development Of N-Type Spin-On Dopant For Silicon Devices |
title_fullStr |
Development Of N-Type Spin-On Dopant For Silicon Devices |
title_full_unstemmed |
Development Of N-Type Spin-On Dopant For Silicon Devices |
title_sort |
development of n-type spin-on dopant for silicon devices |
publishDate |
2009 |
url |
http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf http://eprints.usm.my/29136/ |
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1643706830026702848 |
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13.211869 |