Development Of N-Type Spin-On Dopant For Silicon Devices

In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...

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Bibliographic Details
Main Author: Ahmad Kamil, Suraya
Format: Thesis
Language:English
Published: 2009
Subjects:
Online Access:http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf
http://eprints.usm.my/29136/
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Summary:In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3.