Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

• Main Authors: Dehzangi, Arash, Larki, Farhad, Naseri, Mahmud Godarz, Navasery, Manizheh, Yeop Majlis, Burhanuddin, Mohd Razip Wee, Mohd Farhanulhakim, Mohamed Kamari, Halimah, Islam, Md. Shabiul, Md. Ali, Sawal Hamid, Saion, Elias
• Format: Article
• Language: English
• Published: Elsevier 2015
• Online Access: http://psasir.upm.edu.my/id/eprint/37600/1/Fabrication%20and%20simulation%20of%20single%20crystal%20p-type%20Si%20nanowire%20using%20SOI%20technology.pdf; http://psasir.upm.edu.my/id/eprint/37600/; http://www.sciencedirect.com/science/article/pii/S0169433214018212

Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator...