Fabrication and simulation of single crystal p-type Si nanowire using SOI technology
Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator...
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2015
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my.upm.eprints.376002015-12-15T03:16:14Z http://psasir.upm.edu.my/id/eprint/37600/ Fabrication and simulation of single crystal p-type Si nanowire using SOI technology Dehzangi, Arash Larki, Farhad Naseri, Mahmud Godarz Navasery, Manizheh Yeop Majlis, Burhanuddin Mohd Razip Wee, Mohd Farhanulhakim Mohamed Kamari, Halimah Islam, Md. Shabiul Md. Ali, Sawal Hamid Saion, Elias Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63°C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated. Elsevier 2015-04 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37600/1/Fabrication%20and%20simulation%20of%20single%20crystal%20p-type%20Si%20nanowire%20using%20SOI%20technology.pdf Dehzangi, Arash and Larki, Farhad and Naseri, Mahmud Godarz and Navasery, Manizheh and Yeop Majlis, Burhanuddin and Mohd Razip Wee, Mohd Farhanulhakim and Mohamed Kamari, Halimah and Islam, Md. Shabiul and Md. Ali, Sawal Hamid and Saion, Elias (2015) Fabrication and simulation of single crystal p-type Si nanowire using SOI technology. Applied Surface Science, 334. pp. 87-93. ISSN 0169-4332; ESSN: 1873-5584 http://www.sciencedirect.com/science/article/pii/S0169433214018212 10.1016/j.apsusc.2014.08.074 |
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Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63°C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated. |
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Article |
author |
Dehzangi, Arash Larki, Farhad Naseri, Mahmud Godarz Navasery, Manizheh Yeop Majlis, Burhanuddin Mohd Razip Wee, Mohd Farhanulhakim Mohamed Kamari, Halimah Islam, Md. Shabiul Md. Ali, Sawal Hamid Saion, Elias |
spellingShingle |
Dehzangi, Arash Larki, Farhad Naseri, Mahmud Godarz Navasery, Manizheh Yeop Majlis, Burhanuddin Mohd Razip Wee, Mohd Farhanulhakim Mohamed Kamari, Halimah Islam, Md. Shabiul Md. Ali, Sawal Hamid Saion, Elias Fabrication and simulation of single crystal p-type Si nanowire using SOI technology |
author_facet |
Dehzangi, Arash Larki, Farhad Naseri, Mahmud Godarz Navasery, Manizheh Yeop Majlis, Burhanuddin Mohd Razip Wee, Mohd Farhanulhakim Mohamed Kamari, Halimah Islam, Md. Shabiul Md. Ali, Sawal Hamid Saion, Elias |
author_sort |
Dehzangi, Arash |
title |
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology |
title_short |
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology |
title_full |
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology |
title_fullStr |
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology |
title_full_unstemmed |
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology |
title_sort |
fabrication and simulation of single crystal p-type si nanowire using soi technology |
publisher |
Elsevier |
publishDate |
2015 |
url |
http://psasir.upm.edu.my/id/eprint/37600/1/Fabrication%20and%20simulation%20of%20single%20crystal%20p-type%20Si%20nanowire%20using%20SOI%20technology.pdf http://psasir.upm.edu.my/id/eprint/37600/ http://www.sciencedirect.com/science/article/pii/S0169433214018212 |
_version_ |
1643832020841791488 |
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13.160551 |