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Optimisation of N-channel trench power MOSFET using 2 k factorial design method

The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achievin...

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Main Authors:	Nur S.I., Ibrahim A., Hafizah H.
其他作者:	56402634600
格式:	Article
出版:	2023
主題:	2 <sup>k</sup> factorial design method Optimisation Trench power mosfet
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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