Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam … [et al.]

• Main Authors: Anizam, Fatin Antasha, Ismail, Lyly Nyl, Sihab, Norsabrina, Mohd Sauki, Nur Sa’adah
• Format: Article
• Language: English
• Published: Universiti Teknologi MARA 2021
• Subjects: Electricity; Applications of electric power
• Online Access: https://ir.uitm.edu.my/id/eprint/52081/1/52081.pdf; https://ir.uitm.edu.my/id/eprint/52081/; https://jeesr.uitm.edu.my/

Short channel effect (SCE) occur in the MOSFET devices when the oxide layer became thinner, and the gate length become shorter. The purposed of this study is to find a new dielectric and gate material to replace the conventional oxide which is silicon dioxide (SiO2) and polysilicon as gate material....