Holdings: Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review

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Bibliographic Details
Main Authors:	Louis, Gerrer, Ding, J., Amoroso, S. M., Adamu-Lema, F., R., Hussin, Reid, D., Millar, C., Asenov, A.
Other Authors:	louis.gerrer@glasgow.ac.uk
Format:	Article
Language:	English
Published:	Elsevier 2014
Subjects:	MOSFETs Statistical Variability (SV)
Online Access:	http://dspace.unimap.edu.my:80/dspace/handle/123456789/35523
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