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Characterization of fabrication process noises for 32nm NMOS devices

This paper describes the effect of fabrication process noises to Sub-nanometer devices, which in this case a 32nm NMOS transistor. This experiment a part of a full Taguchi Method analysis to obtain an optimum fabrication recipe for the said transistor. The two noises introduced in the fabrication is...

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書誌詳細
主要な著者:	Elgomati H.A., Majlis B.Y., Ahmad I., Ziad T.
その他の著者:	36536722700
フォーマット:	Conference Paper
出版事項:	2023
主題:	Fabrication MOS devices Semiconductor growth Silicides Taguchi methods Threshold voltage Annealing temperatures Degree of noise Diffusion temperature Fabrication process Nanometer device NMOS devices NMOS transistors Optimum fabrication Sacrificial oxide Transistors
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