Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Chemical cleaning; Deposition; Field effect transistors; Germanium oxides; Growth kinetics; Hafnium; Metal insulator boundaries; Photoelectrons; Photons; Sputtering; X ray photoelectron spectroscopy; Deposition time; Design/methodology/approach; Equivalent oxide thickness; Ge substrates; Interfacial...

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Bibliographic Details
Main Authors: Sahari S.K., Kashif M., Sutan N.M., Embong Z., Nik Zaini Fathi N.A.F., Hamzah A.A., Sapawi R., Majlis B.Y., Ahmad I.
Other Authors: 16022924700
Format: Article
Published: Emerald Group Publishing Ltd. 2023
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