Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium
Chemical cleaning; Deposition; Field effect transistors; Germanium oxides; Growth kinetics; Hafnium; Metal insulator boundaries; Photoelectrons; Photons; Sputtering; X ray photoelectron spectroscopy; Deposition time; Design/methodology/approach; Equivalent oxide thickness; Ge substrates; Interfacial...
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2023
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my.uniten.dspace-234482023-05-29T14:40:34Z Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium Sahari S.K. Kashif M. Sutan N.M. Embong Z. Nik Zaini Fathi N.A.F. Hamzah A.A. Sapawi R. Majlis B.Y. Ahmad I. 16022924700 57221166609 7801574648 57190288286 57194149316 12792679600 16023080700 6603071546 12792216600 Chemical cleaning; Deposition; Field effect transistors; Germanium oxides; Growth kinetics; Hafnium; Metal insulator boundaries; Photoelectrons; Photons; Sputtering; X ray photoelectron spectroscopy; Deposition time; Design/methodology/approach; Equivalent oxide thickness; Ge substrates; Interfacial layer; Metal insulators; Post-oxidation annealing; Rf-sputtering; Germanium Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400�C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application. Final 2023-05-29T06:40:34Z 2023-05-29T06:40:34Z 2017 Article 10.1108/MI-12-2015-0099 2-s2.0-85018869374 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018869374&doi=10.1108%2fMI-12-2015-0099&partnerID=40&md5=a8ed3fe5f74dab9ba6b24d514c59ac84 https://irepository.uniten.edu.my/handle/123456789/23448 34 2 64 68 All Open Access, Green Emerald Group Publishing Ltd. Scopus |
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Chemical cleaning; Deposition; Field effect transistors; Germanium oxides; Growth kinetics; Hafnium; Metal insulator boundaries; Photoelectrons; Photons; Sputtering; X ray photoelectron spectroscopy; Deposition time; Design/methodology/approach; Equivalent oxide thickness; Ge substrates; Interfacial layer; Metal insulators; Post-oxidation annealing; Rf-sputtering; Germanium |
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16022924700 |
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16022924700 Sahari S.K. Kashif M. Sutan N.M. Embong Z. Nik Zaini Fathi N.A.F. Hamzah A.A. Sapawi R. Majlis B.Y. Ahmad I. |
| format |
Article |
| author |
Sahari S.K. Kashif M. Sutan N.M. Embong Z. Nik Zaini Fathi N.A.F. Hamzah A.A. Sapawi R. Majlis B.Y. Ahmad I. |
| spellingShingle |
Sahari S.K. Kashif M. Sutan N.M. Embong Z. Nik Zaini Fathi N.A.F. Hamzah A.A. Sapawi R. Majlis B.Y. Ahmad I. Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium |
| author_sort |
Sahari S.K. |
| title |
Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium |
| title_short |
Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium |
| title_full |
Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium |
| title_fullStr |
Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium |
| title_full_unstemmed |
Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium |
| title_sort |
growth kinetic and composition of the interfacial layer for rf sputtering al2o3 layer on germanium |
| publisher |
Emerald Group Publishing Ltd. |
| publishDate |
2023 |
| _version_ |
1806426412336283648 |
| score |
13.214268 |