Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS
Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal ar...
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| Format: | Conference Paper |
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EDP Sciences
2023
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