Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal ar...

Full description

Saved in:
Bibliographic Details
Main Authors: Atan N., Ahmad I., Majlis B.Y., Azle M.F.
Other Authors: 26422792900
Format: Conference Paper
Published: EDP Sciences 2023
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal arrays; Signal to noise ratio