Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS
Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal ar...
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2023
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my.uniten.dspace-226372023-05-29T14:11:26Z Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS Atan N. Ahmad I. Majlis B.Y. Azle M.F. 26422792900 12792216600 6603071546 57191667430 Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal arrays; Signal to noise ratio Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method's practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source-drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi's signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). After optimization, the result showed that the VTH value of the 18-nm PMOS device was-0.291339. � 2016 The Authors, published by EDP Sciences. Final 2023-05-29T06:11:26Z 2023-05-29T06:11:26Z 2016 Conference Paper 10.1051/matecconf/20167801019 2-s2.0-84992365484 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84992365484&doi=10.1051%2fmatecconf%2f20167801019&partnerID=40&md5=0921afae995e345babe3831b1eb0b011 https://irepository.uniten.edu.my/handle/123456789/22637 78 1019 All Open Access, Gold, Green EDP Sciences Scopus |
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Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal arrays; Signal to noise ratio |
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26422792900 |
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26422792900 Atan N. Ahmad I. Majlis B.Y. Azle M.F. |
| format |
Conference Paper |
| author |
Atan N. Ahmad I. Majlis B.Y. Azle M.F. |
| spellingShingle |
Atan N. Ahmad I. Majlis B.Y. Azle M.F. Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS |
| author_sort |
Atan N. |
| title |
Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS |
| title_short |
Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS |
| title_full |
Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS |
| title_fullStr |
Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS |
| title_full_unstemmed |
Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS |
| title_sort |
influence of optimization of process parameters on threshold voltage for development of hfo2/tisi2 18 nm pmos |
| publisher |
EDP Sciences |
| publishDate |
2023 |
| _version_ |
1806428356976050176 |
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13.18916 |