Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS
Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal ar...
Saved in:
Main Authors: | , , , |
---|---|
Other Authors: | |
Format: | Conference Paper |
Published: |
EDP Sciences
2023
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|