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Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction

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Main Authors: Uda, Hashim, Prof. Dr., Nazwa, Taib, Thikra, S. Dhahi
Other Authors: uda@unimap.edu.my
Format: Working Paper
Language:English
Published: American Institute of Physics. 2013
Subjects:
E-beam lithography (EBL)
Lateral nanogap
Single molecule
Size Expansion Technique (SET)
Size Reduction Technique (SRT)
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/26634
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spelling my.unimap-266342013-07-13T05:57:19Z Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction Uda, Hashim, Prof. Dr. Nazwa, Taib Thikra, S. Dhahi uda@unimap.edu.my E-beam lithography (EBL) Lateral nanogap Single molecule Size Expansion Technique (SET) Size Reduction Technique (SRT) Link to publisher's homepage at http://www.aip.org/ This study describes the comparison among the three fabrication methods of an array of poly-silicon nanogap structures. The three different methods are size expansion technique (SET), size reduction technique (SRT) and e-beam lithography (EBL) technique. Generally, SRT involves the breaking of the primarily pattern with no gap structure into nanogap scale. Conversely, SET engages in the process of enhancing the initially microgap pattern into nanogap scale. EBL refers to a lithographic process that uses a focused beam of electrons to form the circuit patterns needed for material deposition on or removal from the wafer. Using conventional photolithography, a procedure to fabricate poly-silicon nanogap structure on the wafer scale is designed. The nanogap (NG) fabrication procedure is based on the standard CMOS technology follows by employing both methods respectively. The lateral nanogap is introduced in the fabrication process using poly-silicon as an anode electrode. The similarity and distinction will be highlighted for each particular process involved in the fabrication of nanogap structures. The simple least-cost method does not require complicated nanolithography method of fabrication but it is still possible to measure the electrical properties of a single molecule. On top of that, these techniques can be applied extensively to different designs of nanogap structure down to several nanometer levels of dimensions. The innovative method reported here can easily produce a nanogap electrode in a reproducible manner. 2013-07-13T05:57:19Z 2013-07-13T05:57:19Z 2012 Working Paper AIP Conference Proceedings, vol. 1455, 2012, pages 33-41 0094-243X http://proceedings.aip.org/resource/2/apcpcs/1455/1/33_1 http://hdl.handle.net/123456789/26634 en Proceedings of the 2nd ASEAN-APCTP Workshop on Advanced Materials Science and Nanotechnology (AMSN) 2010 American Institute of Physics.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic E-beam lithography (EBL)
Lateral nanogap
Single molecule
Size Expansion Technique (SET)
Size Reduction Technique (SRT)
spellingShingle E-beam lithography (EBL)
Lateral nanogap
Single molecule
Size Expansion Technique (SET)
Size Reduction Technique (SRT)
Uda, Hashim, Prof. Dr.
Nazwa, Taib
Thikra, S. Dhahi
Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction
description Link to publisher's homepage at http://www.aip.org/
author2 uda@unimap.edu.my
author_facet uda@unimap.edu.my
Uda, Hashim, Prof. Dr.
Nazwa, Taib
Thikra, S. Dhahi
format Working Paper
author Uda, Hashim, Prof. Dr.
Nazwa, Taib
Thikra, S. Dhahi
author_sort Uda, Hashim, Prof. Dr.
title Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction
title_short Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction
title_full Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction
title_fullStr Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction
title_full_unstemmed Subnanometer poly-silicon gap structure formation: Comparison study between size expansion and size reduction
title_sort subnanometer poly-silicon gap structure formation: comparison study between size expansion and size reduction
publisher American Institute of Physics.
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/26634
_version_ 1643795008053051392
score 13.214268

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