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Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method

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Bibliographic Details
Main Author: Mohamad Fadzli Ali
Other Authors: Ruslinda A. Rahim (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Silicon > Oxidation
Thin films
Semiconductors
Silicon oxide
Integrated circuits
Oxidation
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1994
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spelling my.unimap-19942008-10-16T04:49:33Z Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method Mohamad Fadzli Ali Ruslinda A. Rahim (Advisor) Silicon -- Oxidation Thin films Semiconductors Silicon oxide Integrated circuits Oxidation Access is limited to UniMAP community. Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed. Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information on site geometry at very low coverages. Kinetic studies of O2 adsorption are characterized by a fast-adsorption regime below one monolayer (ML) with an initial sticking coefficient SO well below unity and much slower adsorption at higher coverages. Atomic oxygen is adsorbed with unit sticking coefficient at very low coverages. At coverages beyond 1 ML, S0 decreases much more slowly with coverage than for O2. Adsorption of O2 can be enhanced using simultaneous ion or electron bombardment. Thermal decomposition studies of ultrathin oxide films show that the film is not in diffusional equilibrium at the desorption temperature and that the decomposition is inhomogeneous with void formation exposing the Si substrate. As the results on the study of the thickness grow on wafer surface, the differences between temperature and time as the parameter are the factors for SiO2 to grow or diffuse on wafer surface. With the increase of temperature or time, the thickness is greater than lower temperature or time and for dry oxidation the growth rate is much slower than wet oxidation. The results also shows that there are different colors appear for different thickness grow on the surface. 2008-09-08T13:14:20Z 2008-09-08T13:14:20Z 2008-03 Learning Object http://hdl.handle.net/123456789/1994 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon -- Oxidation
Thin films
Semiconductors
Silicon oxide
Integrated circuits
Oxidation
spellingShingle Silicon -- Oxidation
Thin films
Semiconductors
Silicon oxide
Integrated circuits
Oxidation
Mohamad Fadzli Ali
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
description Access is limited to UniMAP community.
author2 Ruslinda A. Rahim (Advisor)
author_facet Ruslinda A. Rahim (Advisor)
Mohamad Fadzli Ali
format Learning Object
author Mohamad Fadzli Ali
author_sort Mohamad Fadzli Ali
title Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
title_short Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
title_full Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
title_fullStr Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
title_full_unstemmed Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
title_sort study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1994
_version_ 1643787517033447424
score 13.222552

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