Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics

• Main Author: Mujahidun Mashuri
• Other Authors: Ramzan Mat Ayub (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: Silicon; Silica; Integrated circuits > Materials; Polycrystalline silicon film; Low Pressure Chemical Vapor Deposition; Polycrystalline silicon; Polysilicon
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1350

Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 7...