Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics

Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 7...

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Main Author: Mujahidun Mashuri
Other Authors: Ramzan Mat Ayub (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1350
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spelling my.unimap-13502008-07-01T03:18:21Z Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics Mujahidun Mashuri Ramzan Mat Ayub (Advisor) Silicon Silica Integrated circuits -- Materials Polycrystalline silicon film Low Pressure Chemical Vapor Deposition Polycrystalline silicon Polysilicon Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 700C. This high temperature deposition process limits its application in the advanced device fabrication technology, which required a much lower processing technology or the so called thermal budget. This project studied the feasibility of using a lower temperature deposition technique, called Plasma Enhanced Chemical Vapor Deposition (PECVD) which deposited an amorphous silicon precursor film, at temperatures ranging from 100 – 300 C. This film is then to be converted to polycrystalline structure using a short heat treatment. The effect of PECVD process parameters which include the deposition temperature, RF power and chamber pressure on film characteristics is investigated. It was found that the deposition temperature and RF power have the most important impact on the film physical quality, and the film sheet resistivity is significantly reduced after short heat treatment. 2008-07-01T03:18:21Z 2008-07-01T03:18:21Z 2007-03 Learning Object http://hdl.handle.net/123456789/1350 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon
Silica
Integrated circuits -- Materials
Polycrystalline silicon film
Low Pressure Chemical Vapor Deposition
Polycrystalline silicon
Polysilicon
spellingShingle Silicon
Silica
Integrated circuits -- Materials
Polycrystalline silicon film
Low Pressure Chemical Vapor Deposition
Polycrystalline silicon
Polysilicon
Mujahidun Mashuri
Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
description Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 700C. This high temperature deposition process limits its application in the advanced device fabrication technology, which required a much lower processing technology or the so called thermal budget. This project studied the feasibility of using a lower temperature deposition technique, called Plasma Enhanced Chemical Vapor Deposition (PECVD) which deposited an amorphous silicon precursor film, at temperatures ranging from 100 – 300 C. This film is then to be converted to polycrystalline structure using a short heat treatment. The effect of PECVD process parameters which include the deposition temperature, RF power and chamber pressure on film characteristics is investigated. It was found that the deposition temperature and RF power have the most important impact on the film physical quality, and the film sheet resistivity is significantly reduced after short heat treatment.
author2 Ramzan Mat Ayub (Advisor)
author_facet Ramzan Mat Ayub (Advisor)
Mujahidun Mashuri
format Learning Object
author Mujahidun Mashuri
author_sort Mujahidun Mashuri
title Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
title_short Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
title_full Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
title_fullStr Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
title_full_unstemmed Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
title_sort polysilicon process development – the effect of pecvd process parameters on the film characteristics
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1350
_version_ 1643787226561118208
score 13.222552