Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate
In this work, GaN layer was deposited on patterned sapphire substrate (PSS) by e-beam evaporator and subsequently subjected to ammonia annealing at different temperatures of 900 °C, 950 °C, 980 °C and 1100 °C. The crystalline properties of the GaN layer improved as the temperature increased. In part...
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Main Authors: | Zainal, Norzaini, Samsudin, Muhammad Esmed Alif, Md Taib, Muhamad Ikram, Ahmad, Mohd Anas, Shuhaimi, Ahmad |
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Format: | Article |
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Elsevier
2020
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Online Access: | http://eprints.um.edu.my/25719/ https://doi.org/10.1016/j.spmi.2020.106722 |
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