Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam … [et al.]
Short channel effect (SCE) occur in the MOSFET devices when the oxide layer became thinner, and the gate length become shorter. The purposed of this study is to find a new dielectric and gate material to replace the conventional oxide which is silicon dioxide (SiO2) and polysilicon as gate material....
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Main Authors: | Anizam, Fatin Antasha, Ismail, Lyly Nyl, Sihab, Norsabrina, Mohd Sauki, Nur Sa’adah |
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Format: | Article |
Language: | English |
Published: |
Universiti Teknologi MARA
2021
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Subjects: | |
Online Access: | https://ir.uitm.edu.my/id/eprint/52081/1/52081.pdf https://ir.uitm.edu.my/id/eprint/52081/ https://jeesr.uitm.edu.my/ |
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