Performance investigation of high-k dielectric material for shorter channel length MOSFET / Fatin Antasha Anizam
The objective of this study is to investigate the performance of MOSFET using different types of high-k dielectric material which is silicon nitride (Si3N4), aluminium oxide (Al203) and hafnium oxide (HfO2 ). The purposed of this study is to find a new dielectric material that can replace silicon di...
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| Format: | Student Project |
| Language: | English |
| Published: |
2020
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| Online Access: | http://ir.uitm.edu.my/id/eprint/39863/1/39863.pdf http://ir.uitm.edu.my/id/eprint/39863/ |
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