Electroluminescence studies of modulation p-doped quantum dot laser structures
Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this red...
Saved in:
Main Authors: | Hasbullah, Nurul Fadzlin, Hopkinson, Mark, Alexander, Ryan R., Hogg, Richard A., David, John P.R, Badcock, Tom J., Mowbray, David J. |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2010
|
Subjects: | |
Online Access: | http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf http://irep.iium.edu.my/1478/ http://dx.doi.org/10.1109/JQE.2010.2049828 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Dark Current mechanisms in quantum dot laser structures
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2011) -
Effect of modulation p-doping on the optical properties of quantum dot laser structure
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2010) -
Reverse leakage current mechanisms in quantum dot laser structures
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2011) -
p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
by: Liu, H. Y., et al.
Published: (2006) -
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
by: Sanchez, A. M., et al.
Published: (2009)