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Electroluminescence studies of modulation p-doped quantum dot laser structures

Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this red...

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書誌詳細
主要な著者:	Hasbullah, Nurul Fadzlin, Hopkinson, Mark, Alexander, Ryan R., Hogg, Richard A., David, John P.R, Badcock, Tom J., Mowbray, David J.
フォーマット:	論文
言語:	English
出版事項:	IEEE 2010
主題:	TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf http://irep.iium.edu.my/1478/ http://dx.doi.org/10.1109/JQE.2010.2049828
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