p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

• Main Authors: Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, Nurul Fadzlin, Jin, C. Y., Hopkinson, M., Hogg, R. A.
• Format: Article
• Language: English
• Published: American Institute of Physics 2006
• Subjects: QC Physics; TA1501 Applied optics. Lasers
• Online Access: http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf; http://irep.iium.edu.my/1306/; http://apl.aip.org/resource/1/applab/v89/i7/p073113_s1?isAuthorized=no

Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15...