Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation

• Main Authors: Ahmad Fauzi, Dhiyauddin, Alang Rashid, Nahrul Khair, Mohamed Zin, Muhammad Rawi, Hasbullah, Nurul Fadzlin
• Format: Article
• Language: English; English; English
• Published: IIUM Press 2017
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf; http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf; http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf; http://irep.iium.edu.my/57752/; http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/653

In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliab...