Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes
An Indium Gallium Arsenide (InGaAs)-based-infrared light emitting diodes (lR-LEDs) chip was numerically analyzed based on different quantum wells (QWs) configurations in heterojunction epi-layers for optimal electro-optics performance. The performance analysis is executed based on carrier concentrat...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Springer
2024
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/114029/1/114029_Configuration%20analysis%20of%20the%20quantum%20well%20epi-layer.pdf http://irep.iium.edu.my/114029/7/114029_Configuration%20analysis%20of%20the%20quantum%20well%20epi-layer_Scopus.pdf http://irep.iium.edu.my/114029/ https://link.springer.com/article/10.1140/epjp/s13360-024-04948-z |
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