Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes

• Main Authors: Nazmi, Ahmad Nadzimuddin, Ahmad Noorden, Ahmad Fakhrurrazi, Isa, Hafizah Noor, Bahadoran, Mahdi
• Format: Article
• Language: English; English
• Published: Springer 2024
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/114029/1/114029_Configuration%20analysis%20of%20the%20quantum%20well%20epi-layer.pdf; http://irep.iium.edu.my/114029/7/114029_Configuration%20analysis%20of%20the%20quantum%20well%20epi-layer_Scopus.pdf; http://irep.iium.edu.my/114029/; https://link.springer.com/article/10.1140/epjp/s13360-024-04948-z

An Indium Gallium Arsenide (InGaAs)-based-infrared light emitting diodes (lR-LEDs) chip was numerically analyzed based on different quantum wells (QWs) configurations in heterojunction epi-layers for optimal electro-optics performance. The performance analysis is executed based on carrier concentration, radiative recombination, and electroluminescence. Four structures with different QW configurations are optimized for low current injection with high internal quantum efficiency. The carriers in the single quantum well (SQW) configuration are leaked at high operating current density, thus leading to a droop in the efficiency due to the reduced radiative recombination rate. The results show that the carrier confinement increase significantly enhances the radiative recombination rate for a structure with a low band gap of QW. The optimal configuration consists of 3 QWs in the epi layers and emits 900 nm peak wavelength. The findings indicate that the improved carrier confinement in the active region significantly enhances the light intensity of NlR-LED, which is nearly twice as high in 3QWs than in the SQW structure.