Preliminary study on laser annealed NP junction in phosphorus implanted germanium
One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with high-mobility material of germanium. However, fabrication of Ge np junction faces low dopant activation problem due to the interaction between dopant and defect that was originated from ion implantation...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/92522/ http://dx.doi.org/10.1109/ICSE49846.2020.9166881 |
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