Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

• Main Authors: Aid, S. R., Uneme, T., Wakabayashi, N., Yamazaki, K., Uedono, A., Matsumoto, S.
• Format: Article
• Published: Wiley-VCH Verlag 2017
• Subjects: T Technology (General)
• Online Access: http://eprints.utm.my/id/eprint/77030/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85026375408&doi=10.1002%2fpssa.201700225&partnerID=40&md5=7daa7a7ec40838bb85ee38fb4efc7021

Activation of Mg-implanted GaN has been investigated by the combination of thermal and laser annealing. The laser annealing was carried out using third harmonic generation (λ = 355 nm) of a Nd:YAG laser. Mg ion activation and reduction of implanted-defects after various annealing processes have been...