Preliminary study on laser annealed NP junction in phosphorus implanted germanium

• Main Authors: Aid, Siti Rahmah, Mohd. Rashid, Nur Nadhirah, Jonny, Nur Farhana Arissa, Centeno, Anthony, Ikenoue, Hiroshi
• Format: Conference or Workshop Item
• Published: 2020
• Subjects: T Technology (General)
• Online Access: http://eprints.utm.my/id/eprint/92522/; http://dx.doi.org/10.1109/ICSE49846.2020.9166881

One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with high-mobility material of germanium. However, fabrication of Ge np junction faces low dopant activation problem due to the interaction between dopant and defect that was originated from ion implantation...