Electrochemically deposited germanium on silicon and its crystallization by rapid melting growth
It is well known that continuous miniaturization of transistors tends to create several problems such as current leakage, short channel effect, etc. Therefore, introduction of new channel material with higher carrier mobilities such as Germanium (Ge) is suggested to overcome this physical limitation...
Saved in:
Main Author: | Zainal Abidin, Mastura Shafinaz |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/78192/1/MasturaShafinazZainalPFKE2014.pdf http://eprints.utm.my/id/eprint/78192/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:98110 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Crystallization of electrodeposited germanium thin film on silicon (100)
by: Zainal Abidin, Mastura Shafinaz, et al.
Published: (2013) -
Synthesis of germanium dioxide microclusters on silicon substrate in non-aqueous solution by electrochemical deposition
by: Abidin, M. S. Z., et al.
Published: (2017) -
Effects of pattern dimensions on stabilization of crystal orientation for (111) geoninsulator in rapid melting growth
by: Suzzaman, Mohammad Ani, et al.
Published: (2013) -
Effects of pattern dimensions on stabilization of crystal orientation for (111) ge-on-insulator in rapid melting growth
by: Anisuzzaman, Mohammad, et al.
Published: (2013) -
Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
by: Morshed, T., et al.
Published: (2016)