Electrochemically deposited germanium on silicon and its crystallization by rapid melting growth

• Main Author: Zainal Abidin, Mastura Shafinaz
• Format: Thesis
• Language: English
• Published: 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/78192/1/MasturaShafinazZainalPFKE2014.pdf; http://eprints.utm.my/id/eprint/78192/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:98110

It is well known that continuous miniaturization of transistors tends to create several problems such as current leakage, short channel effect, etc. Therefore, introduction of new channel material with higher carrier mobilities such as Germanium (Ge) is suggested to overcome this physical limitation...