A study of 3-D Zinc Oxide nanowire field effect transistor with defect and interface charge density
Electrical characteristics of three-dimensional Zinc Oxide nanowire field effect transistor has been studied using 3-D TCAD tool. The device exhibited a good output performance that clearly shows linear and saturation mode with threshold voltage of 0.75V, field-effect mobility of ∼108 cm2/v.s and on...
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| 主要な著者: | , |
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| フォーマット: | Conference or Workshop Item |
| 出版事項: |
Institute of Electrical and Electronics Engineers Inc.
2016
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| オンライン･アクセス: | http://eprints.utm.my/id/eprint/73328/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966692459&doi=10.1109%2fSCORED.2015.7449373&partnerID=40&md5=b839906c1190633bfe1a7ca8882eb1a8 |
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| 要約: | Electrical characteristics of three-dimensional Zinc Oxide nanowire field effect transistor has been studied using 3-D TCAD tool. The device exhibited a good output performance that clearly shows linear and saturation mode with threshold voltage of 0.75V, field-effect mobility of ∼108 cm2/v.s and on/off current ratio of ∼109. This device is then introduced with defect and interface charge density separately, which results on reduction of the field-effect mobility and an increase of the threshold voltage. This study is useful to determine possible factors causing poor performance of fabricated device and also can work as gas sensor device by putting trap or change the surface charge density. |
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