The effect of V/III ratio on the crystal structure of gallium arsenide nanowires
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-assisted using metal-organic chemical vapour deposition. Transmission electron microscopy and X-Ray diffraction analysis were carried out to investigate the effects of V/III ratio and nanowire diameter...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/68555/ http://dx.doi.org/10.4028/www.scientific.net/AMR.895.539 |
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