VHF-PECVD fabrication parameters dependent morphologyvariation of gold catalyst assisted silicon thin film growth

• Main Authors: Hamzah, Khaidzir, Mohd. Yassin, M. Abdullah Izat, Ghoshal, Sib Krishna Rishna, M., Akmal Hasanudin, Ismail, Abd. Khamim
• Format: Article
• Language: English
• Published: Penerbit Universiti Teknologi Malaysia 2015
• Subjects: TP Chemical technology
• Online Access: http://eprints.utm.my/55760/1/KhaidzirHamzahMAbdullahIzatMohdYassinSibKrishnaGhoshal2015_VHFPECVDFabricationParametersDependentMorphologyvariation.pdf; http://eprints.utm.my/55760/; http://dx.doi.org/http://dx.doi.org/10.11113/jt.v76.4030

Achieving two dimensional quantum structure of silicon with well-defined tunable morphology is an outstanding issue. We present the preliminary results on fabrication parameters dependent silicon thin film production using VHF-PECVD method. Five samples are prepared on Si(100) substrate with gold (Au) catalyst by adjusting different parameters such as deposition time, temperature and the flow of precursor gas. The samples morphology are analyzed using FESEM. The results reveal that the silicon thin film appear to be smooth and more uniform after an enormous amount of hydrogen is inserted together with the precursor gas (silane) during the deposition process. More interestingly, the films exhibit silicon nanowires as the deposition time is increased up to 1 hour. This morphological transformation is attributed to the vapor-liquid-solid (VLS) mechanism related to the deposition process.