Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behave...
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Online Access: | http://eprints.utm.my/id/eprint/52478/1/SuhanaMohamedSulthan2014_Effectofatomiclayer.pdf http://eprints.utm.my/id/eprint/52478/ http://dx.doi.org/10.1186/1556-276X-9-517 |
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my.utm.524782018-09-19T05:07:38Z http://eprints.utm.my/id/eprint/52478/ Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors Mohamed Sulthan, Suhana Ditshego, Nonofo J. Gunn, Robert Ashburn, Peter Chong, Harold M. H. TK Electrical engineering. Electronics Nuclear engineering This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm(2)/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm(2)/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing Springer New York LLC 2014 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/52478/1/SuhanaMohamedSulthan2014_Effectofatomiclayer.pdf Mohamed Sulthan, Suhana and Ditshego, Nonofo J. and Gunn, Robert and Ashburn, Peter and Chong, Harold M. H. (2014) Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors. Nanoscale Research Letters, 9 . ISSN 1556-276X http://dx.doi.org/10.1186/1556-276X-9-517 DOI: 10.1186/1556-276X-9-517 |
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This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm(2)/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm(2)/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing |
format |
Article |
author |
Mohamed Sulthan, Suhana Ditshego, Nonofo J. Gunn, Robert Ashburn, Peter Chong, Harold M. H. |
author_facet |
Mohamed Sulthan, Suhana Ditshego, Nonofo J. Gunn, Robert Ashburn, Peter Chong, Harold M. H. |
author_sort |
Mohamed Sulthan, Suhana |
title |
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors |
title_short |
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors |
title_full |
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors |
title_fullStr |
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors |
title_full_unstemmed |
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors |
title_sort |
effect of atomic layer deposition temperature on the performance of top-down zno nanowire transistors |
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Springer New York LLC |
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2014 |
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http://eprints.utm.my/id/eprint/52478/1/SuhanaMohamedSulthan2014_Effectofatomiclayer.pdf http://eprints.utm.my/id/eprint/52478/ http://dx.doi.org/10.1186/1556-276X-9-517 |
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