Simulation of trigate fet with semi-cylindrical channel to reduce corner effect

• Main Authors: Ismail, Razali, Hamid, Fatimah
• Format: Conference or Workshop Item
• Published: 2013
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/51307/; http://dx.doi.org/10.1109/UKSim.2013.13

Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorp...